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MRFE6VP6300H 300W 50V Mosfet transistor

US $140.00

The MRFE6VP6300H are high ruggedness devices, designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

Features

  • Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal TypePout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulsed (100 µsec,
20% Duty Cycle)
300 Peak23026.574.0–16
CW300 Avg.13025.080.0–15
  • Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles
    • 300 Watts CW Output Power
    • 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 µsec
  • Capable of 300 Watts CW Operation
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • NI-780-4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
  • NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.

Add to Cart:

  • Model: MRFE6VP6300H
  • 5 Units in Stock


This product was added to our catalog on Wednesday 10 October, 2012.