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MRFE6VP5600H 600W 50V Mosfet transistor

US $200.00
  These high ruggedness devices, MRFE6VP5600H are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

Features

  • Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal TypePout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulsed (100 µsec,
20% Duty Cycle)
600 Peak23025.074.6–18
CW600 Avg.23024.675.2–17
    • Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
      • 600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 µsec
    • Unmatched Input and Output Allowing Wide Frequency Range Utilization
    • Device can be used Single-Ended or in a Push-Pull Configuration
    • Qualified Up to a Maximum of 50 VDD Operation
    • Characterized from 30 V to 50 V for Extended Power Range
    • Suitable for Linear Application with Appropriate Biasing
    • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
    • Characterized with Series Equivalent Large-Signal Impedance Parameters
    • RoHS Compliant
    • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

Add to Cart:

  • Model: MRFE6VP5600H
  • 3 Units in Stock


This product was added to our catalog on Wednesday 10 October, 2012.