MRFE6VP5600H 600W 50V Mosfet transistor

  These high ruggedness devices, MRFE6VP5600H are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

Features

• Typical Performance: VDD = 50 Volts, IDQ = 100 mA

• • Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
    • 600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 µsec
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 V_DD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.